New SiC Schottky diodes increase efficiency for high-frequency applications

Vishay Intertechnology has introduced ten new 650V SiC Schottky diodes. Featuring a merged PIN Schottky design, the Vishay Semiconductors devices are intended to increase the efficiency of high-frequency applications by lessening switching losses despite the effects from temperature variances, providing the diodes to function at higher temperatures.

The MPS design of the diodes shields the electric field from the Schottky barrier to decrease leakage currents while growing surge current ability through hole injection. Compared to pure silicon Schottky devices, the diodes manage the same level of current with just a slight increase in forward voltage drop while exhibiting a significantly higher degree of ruggedness.

The devices are designed for PFC and output rectification in flyback power supplies and LLC converters for servers, UPS, telecom equipment, and solar inverters, where they give designers increased flexibility in system optimisation. The diodes are offered with current ratings from 4A to 40A in the 2L TO-220AC and TO-247AD 3L packages and provide a high-temperature operation to +175C.