New MOSFET delivers high power density and efficiency

New Yorker Electronics has released new Vishay Siliconix 30V N-Channel TrenchFET Gen V power MOSFET that offers increased power density and efficiency for isolated and non-isolated topologies. Provided in the 3.3mm x 3.3mm thermally enhanced PowerPAK 1212-8S package, the Vishay Siliconix SiSS52DN provides best in class on-resistance of 0.95mOhm at 10V, a 5% improvement over the previous generation product.

Also, the device delivers on-resistance of 1.5mOhm at 4.5V, while its 29.8mOhm*nC on-resistance times gate charge at 4.5V — a critical FOM for MOSFETs employed in switching applications — is one of the lowest available. The device's FOM represents a 29% improvement over earlier-generation devices, translating into diminished conduction and switching losses to save energy in power conversion applications. It has a temperature range of -55C to +150C.

The single configuration device is excellent for low side switching for synchronous rectification, synchronous buck converters, switch tank topologies, OR-ring FETs, DC-DC converters, and load switches for power supplies in servers and telecom and RF equipment. By achieving high performance in isolated and non-isolated topologies, the MOSFET eases part selection for designers working with both. The new device is also 100% RG and UIS-tested, RoHS-compliant and halogen-free.