Power MOSFET optimised for higher switching frequencies

Alpha and Omega Semiconductor Limited has released its latest 80V Power MOSFET utilising patented Shield Gate Technology optimised for higher switching frequencies employed in telecom and server power supply to deliver higher efficiency compared to the past generation. The new 80V Power MOSFET technology produces lower switching losses in hard switching, topologies and have less voltage overshoot than the earlier generation. This enhanced performance from light load operation and during the load range results in more accessible design choices for high-efficiency applications. The family of devices allows the highest levels of power density and energy efficiency, which are crucial in power supplies, solar, and battery power applications such as in eScooters.

AONR66820 and AONS66811 are power MOSFETs in the DFN3.3x3.3 and DFN 5x6 package, respectively. AONR66820 is ideal for isolated DC-DC converters employed in telecom applications. AONS66811 is suitable for synchronous rectification and gives improved reverse recovery charge and decreased voltage overshoot, which offers higher efficiency and more robustness to the power supply.

The AOTL66810 (80V) in TOLL package has an approximately 25% smaller footprint than a standard wire-bonded TO-263 (D2PAK) package. This new device provides a higher power density compared to current solutions. It is ideal for industrial BLDC motor applications and battery management to decrease the number of MOSFETs in parallel. The device has a 1.25mOhms max at 10Vgs with a maximum drain current of 420A at 25C. The pulsed current at 1700A is limited by the maximum junction temperature of 175C.

“With the significant performance improvement with clip technology in a robust TOLL package enables higher current density and higher current capability. The AOTL66810 simplifies new designs to enable savings in overall system cost due to a reduced number of devices in parallel. AOS’s TOLL package is best suited for high power applications,” said Peter H. Wilson, director of LV/MV MOSFETs at AOS.