07-03-2022 | Navitas Semiconductor | Power
Navitas Semiconductor has stated that its GaNFast technology has been chosen to provide an industry-leading fast charging solution for the realme GT Neo 3 smartphone series. The new 150W charger provided ‘in-box’ with the device is the most powerful member of the new ultra-fast smartphone charger category enabled by GaNFast power ICs.
Powered by a Dimensity 8100 chip, the realme GT Neo 3 features up to 150W UDCA, claimed to be the industry’s fastest and most powerful commercial charging solution. Advanced heat management and battery protection provide cool, long-life operation.
The availability of a 150W charger, built around the GaNFast power ICs enables users to capitalise on this technology by charging the phone’s 4,500mAhr battery from 0-50% in just five minutes. At only 58mm x 58mm x 30 mm (101cc), the charger achieves an outstanding 1.5W/cc power density.
Madhav Sheth, president of realme international business group and VP of realme, said: “Our super flash charging technology delivers the world’s fastest smartphone charging solution, providing users of the new realme GT Neo 3 with the flexibility and convenience of fully charging their phones in the shortest possible time. Gallium nitride ICs have been fundamental to delivering this step-change in performance while keeping charger weight and form factor as low as possible.”
“We would like to congratulate realme on the global launch of its GT Neo 3 series and for making available the world’s first commercial solution for 150W smartphone charging,” said Navitas CEO and co-founder Gene Sheridan. “This milestone in the ultra-fast charger sector is powered by Navitas GaNFast technology, which has allowed realme to create a new 150W charging benchmark for efficiency, speed and form factor.”