New N-channel power MOSFETs support larger automotive currents

Toshiba Electronics Europe GmbH releases two new automotive-grade 40V N-channel power MOSFETs providing a real impact on next-generation vehicle designs. The XPQR3004PB and XPQ1R004PB use the game-changing large transistor outline gull-wing leads package format - known as L-TOGL.

The newly released MOSFETs are highly optimised for managing large currents thanks to their L-TOGL packages and the enhanced heat dissipation characteristics emanated. They each provide high drain current ratings (400A for the XPQR3004PB and 200A for the XPQ1R004PB) and industry-leading on-resistance values (0.3mOhm for the XPQR3004PB and 1mOhm for the XPQ1R004PB).

There is no internal post structure (solder connection) on these products, and this is delivered by connecting the source and outer leads with an inventive copper clip. Employing a multi-pin structure for the source leads lowers package resistance (and associated losses) by approximately 70% compared with the existing TO-220SM(W) package. The resulting drain current (ID) rating of the XPQR3004PB denotes a 60% increase over the current TKR74F04PB housed in the TO-220SM(W) package. Also, the thick copper frame decreases junction-to-case thermal impedance substantially. It is 0.2C/W for the XPQR3004PB and 0.65C/W for the XPQ1R004PB. This reduces heat dissipation, decreases operating temperatures and improves reliability.

Intended for service in demanding automotive applications at temperatures up to 175C, the devices are AEC-Q101 qualified. Their gull-wing leads lower mounting stress and permit easy visual inspection, thereby enhancing the solder joint reliability.

When employed in high-current automotive applications, such as semiconductor relays or integrated starter generators, the devices allow designs to be simplified, and fewer MOSFETs are required. This indicates that size, weight, and cost reductions can all be realised.