Second series GaN ICs deliver best-in-class robustness and high efficiency

Cambridge GaN Devices has released the second series of its ICeGaN 650V GaN HEMT family, providing industry-leading robustness, ease-of-use and maximised efficiency. H2 Series ICeGaN HEMTs use the company's smart gate interface that virtually eradicates typical e-mode GaN weaknesses, providing greatly improved overvoltage robustness, higher noise-immune threshold, dV/dt suppression and ESD protection. Like previous generation devices, the new 650V transistors are driven similarly to Si MOSFETs, removing the necessity for complex and inefficient circuits and employing commercially available industry gate drivers instead. Finally, the devices provide a QG that is 10x lower than silicon parts, and QOSS is 5x less. This allows them to significantly decrease switching losses at high switching frequencies, lowering size and weight. This results in class-leading efficiency performance, a full 2% better than the industry's best Si MOSFETs in SMPS applications.

Giorgia Longobardi, CEO and co-founder, Cambridge GaN Devices, commented: "CGD has established an innovative leadership position with the H2 series ICeGaN. Independent research by Virginia Tech has proven ICeGaN to be industry's most rugged GaN devices, and in terms of ease-of-use, they can be driven like a standard silicon MOSFET, so the learning curve which can slow market acceptance is eliminated. The efficiency of GaN is well known, and ICeGaN is impressive across the full load range."

The new series features an innovative NL3 (No Load and Light Load) Circuit, integrated on-chip with the GaN switch, resulting in record-low power losses. An advanced clamping structure with an integrated Miller Clamp – also on-chip - removes the necessity for negative gate voltages, attaining true zero-volt turn-off and enhancing dynamic RDS(ON) performance. These e-mode (normally off) single-chip GaN HEMTs incorporate a monolithically-integrated interface and protection circuit for unmatched gate reliability and design simplicity. Finally, a Current Sense function decreases power dissipation and allows direct connection to ground for optimised cooling and EMI.

Longobardi continued: "CGD has solved all the challenges that normally slow the adoption of a new technology. Furthermore, we are now ready to satisfy the mass market with our H2 Series ICeGaN transistors which are available through an established supply chain."