New portfolios pushing the limits of power design

Texas Instruments has introduced two new power conversion device portfolios to help engineers achieve more power in smaller spaces, providing the highest power density at a lower cost. Its new 100V integrated GaN power stages feature thermally enhanced dual-side cooled package technology to simplify thermal designs and achieve the highest power density in mid-voltage applications at more than 1.5kW/in3. The new 1.5W isolated DC-DC modules with integrated transformers are the industry's smallest and most power-dense, helping engineers shrink the isolated bias power supply size in automotive and industrial systems by over 89%.

"For power-supply designers, delivering more power in limited spaces will always be a critical design challenge," said Kannan Soundarapandian, general manager of High Voltage Power at TI. "Take data centres, for example – if engineers can design power-dense server power-supply solutions, data centres can operate more efficiently to meet growing processing needs while also minimising their environmental footprint. We're excited to continue to push the limits of power management by offering innovations that help engineers deliver the highest power density, efficiency and thermal performance."

With the company's new 100V GaN power stages, LMG2100R044 and LMG3100R017, designers can decrease power-supply solution size for mid-voltage applications by more than 40% and attain industry-leading power density of over 1.5kW/in3, facilitated by GaN technology's higher switching frequencies. The new portfolio also decreases switching power losses by 50% compared to silicon-based solutions while achieving 98% or higher system efficiency, given the lower output capacitance and lower gate-drive losses. In a solar inverter system, for example, higher density and efficiency allow the same panel to store and produce more power while decreasing the size of the overall microinverter system.

The company's thermally enhanced dual-side cooled package is a key enabler of the thermal performance in the 100V GaN portfolio. This technology allows more efficient heat removal from both sides of the device and provides improved thermal resistance compared to competing integrated GaN devices.

With over eight times higher power density than discrete solutions and three times higher power density than competing modules, the new 1.5W isolated DC-DC modules deliver the highest output power and isolation capability (3kV) for automotive and industrial systems in a 4mm x 5mm very thin small outline no-lead (VSON) package. With its UCC33420-Q1 and UCC33420, designers can also effortlessly meet stringent EMI requirements, such as Comité International Spécial des Perturbations Radioélectriques (CISPR) 32 and 25, with fewer components and a simple filter design.

The new modules use the company's next-generation integrated transformer technology, eliminating the necessity for an external transformer in a bias supply design. The technology enables engineers to shrink solution size by more than 89% and reduce height by up to 75% while cutting BOM by half compared to discrete solutions.

With the first automotive-qualified solution in this small package, designers can now decrease the footprint, weight and height of their bias supply solution for EV systems such as battery management systems. The new module enables designers to minimise PCB area for space-constrained industrial power delivery in data centres.

Devices from both portfolios will be displayed at this year's APEC, February 25-29, California.