Low-side gate driver for SiC MOSFETs and high-power IGBTs

Littelfuse, Inc. has launched the IX4352NE Low-side SiC MOSFET and IGBT Gate Driver. This innovative driver is designed to drive SiC MOSFETs and high-power IGBTs in industrial applications.

The driver's key differentiator lies in its separate 9A source and sink outputs, which allow tailored turn-on and turn-off timing while minimising switching losses. An internal negative charge regulator also supplies a user-selectable negative gate drive bias for improved dV/dt immunity and faster turn-off. With an operating voltage range (VDD-VSS) of up to 35V, this driver delivers excellent flexibility and performance.

One of the device's standout features is its internal negative charge pump regulator, which eradicates the necessity for an external auxiliary power supply or DC-DC converter. This feature is advantageous for turning off SiC MOSFETs, saving valuable space typically needed for external logic-level translator circuitry. The logic input's compatibility with standard TTL or CMOS logic levels further enhances space-saving capabilities.

The driver is ideal for driving SiC MOSFETs in various industrial applications such as onboard and offboard chargers, PFC, DC-DC converters, motor controllers, and industrial power inverters.

Its superior performance makes it excellent for demanding power electronics applications in the EV, industrial, alternate energy, smart home, and building automation markets.

With its comprehensive features, the driver simplifies circuit design and provides a higher level of integration. Built-in protection features such as desaturation detection (DESAT) with soft shutdown sink driver, UVLO, and thermal shutdown (TSD) ensure the power device and gate driver protection. The integrated open-drain FAULT output signals a fault condition to the microcontroller, enhancing safety and reliability. Furthermore, the device saves valuable PCB space and increases circuit density, contributing to overall system efficiency.

"The IX4352NE extends our broad range of low-side gate drivers with a new 9 A sink/source driver, simplifying the gate drive circuitry needed for SiC MOSFETs," commented June Zhang, product manager, Integrated Circuits Division (SBU) at Littelfuse. "Its various built-in protection features and integrated charge pump provide an adjustable negative gate drive voltage for improved dV/dt immunity and faster turn-off. As a result, it can be used to drive any SiC MOSFET or power IGBT, whether it is a Littelfuse device or any other similar component available on the market."