27-11-2024 | Mouser Electronics | Power
Mouser has released a new eBook in collaboration with Analog Devices, Inc. (ADI) and Bourns exploring the challenges and benefits of GaN technology in the pursuit of efficiency, performance, and sustainability.
'10 Experts Discuss Gallium Nitride Technology' explores how GaN technology, which allows higher efficiency, faster switching speeds, and greater power density than silicon, revolutionises power electronics. The advantages of GaN technology provide far-reaching implications across varied industries, from automotive and industrial applications to consumer electronics and renewable energy. The new eBook provides insights from experts from ADI, Bourns, and other companies on the benefits of GaN, the challenges first-time GaN designers may face, and how to best navigate the transition from silicon to GaN. The eBook also highlights relevant products from ADI and Bourns, including GaN controllers and drivers, power inductors, and more.
The ADI LTC7890/1 synchronous step-down controllers are high-performance, step-down, DC-to-DC switching regulator controllers that drive N-channel synchronous GaN FET power stages from input voltages up to 100 V. Compared to a silicon metal-oxide-semiconductor solution, these devices simplify design while needing no protection diodes or other external components.
The LT8418 is a 100V half-bridge GaN driver that integrates top and bottom driver stages, driver logic control, and protections. The device provides split gate drivers to adjust the turn-on and turn-off slew rates of GaN FETs to suppress ringing and optimise EMI performance.
High switching frequencies in GaN technology demand a careful selection of passive components. Bourns delivers advanced magnetic components optimised for GaN's higher frequencies, including their PQ flat power inductors, CWP3230A chip inductors, and TLVR1105T TLVR inductors. These devices offer low inductance, high current ratings, and shielded construction for low radiation.
The Bourns HCTSM150102HL transformer features reinforced isolation, a 15mm minimum clearance/creepage distance, and 7.64kV (2s) withstanding voltage to provide an elevated degree of isolation from high-voltage hazards. It is constructed with a ferrite toroid core for a high coupling factor and efficiency.
