Asymmetrical TVS diodes provide superior gate driver protection for automotive SiC MOSFETs

Littelfuse, Inc. has launched its TPSMB Asymmetrical TVS Diode Series, the first-to-market asymmetrical TVS diode specifically designed for the protection of SiC MOSFET gate drivers in automotive applications. This innovative product addresses the increasing demand for reliable overvoltage protection in next-generation EV systems, delivering a compact, single-component solution that replaces multiple Zener diodes or TVS components conventionally used for gate driver protection.

The series provides superior protection for SiC MOSFET gate drivers, which are prone to overvoltage events due to faster switching speeds compared to traditional silicon-based MOSFETs or IGBTs. The unique asymmetrical design of the series supports SiC MOSFETs' differing positive and negative gate driver voltage ratings, providing enhanced performance in various demanding automotive power applications where SiC MOSFETs are used, including onboard chargers, EV traction Inverters, I/O interfaces, and Vcc buses. These applications demand high-performance OVP for SiC MOSFET gate drivers to ensure optimal performance, longevity, and efficiency.

Charlie Cai, director of Product Management, Protection Business, Littelfuse, emphasises the value this product brings to automotive engineers: "The TPSMB Asymmetrical TVS Diode Series offers an innovative solution for SiC MOSFET gate driver protection, eliminating the need for multiple components and simplifying the design process for engineers. Its compact, reliable design ensures that critical automotive power systems are safeguarded against overvoltage events, supporting the continued advancement of electric vehicles and other high-performance applications."