SiC Schottky diodes in SOT-227 package increase efficiency in high frequency applications

Vishay Intertechnology, Inc. has introduced 16 new 650V and 1200V SiC Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high frequency applications, the Vishay Semiconductors devices deliver the best trade-off between capacitive charge (QC) and forward voltage drop for diodes in their class.

The devices comprise 40A to 240A dual diode components in a parallel configuration, and 50A and 90A single phase bridge devices. Built on state-of-the-art thin wafer technology, the diodes provide a low forward voltage drop down to 1.36V that dramatically lowers conduction losses for increased efficiency. Further raising efficiency, the devices supply better reverse recovery parameters than Si-based diodes and have virtually no recovery tail.

Typical applications for the components will include AC/DC PFC and DC-DC ultra-high-frequency output rectification in FBPS and LLC converters for photovoltaic systems, charging stations, industrial UPS, and telecom power supplies. In these applications, the low QC down to 56nC in the diodes allows for high-speed switching, while their industry-standard package provides a drop-in replacement for competing solutions.

The diodes deliver high temperature operation to +175C and a positive temperature coefficient for easy paralleling. UL-approved to file E78996, the devices feature a large creepage distance between terminals and a simplified mechanical design for rapid assembly.