Power MOSFETs supply high switching speed and low resistance

The Rutronik portfolio for power transistors includes the power MOSFETs from YAGEO XSemi. They are characterised by low on-resistance and high switching speeds for multifarious applications, including analog and digital circuits. In addition to their efficiency and cost-effectiveness, the series provides various package options to help developers fulfil individual application needs. It is widely used for commercial and industrial surface mount applications. These power MOSFETs are available as high-voltage and low-voltage options.

With the power MOSFETs and a wide range of MOSFETs widely used and proven in AC/DC and DC-DC applications, YAGEO offers cost-effective and alternative components for virtually every need. At the same time, the manufacturer has a wide portfolio of passive components to meet customer requirements.

The N-Channel offers 20V to 700V drain-source voltage with up to 300A leakage current, VGS at 10 V4. The P-Channel provides 20V to 700V drain-source voltage and up to 300A leakage current. The Dual N-Channel has 100V drain-source voltage, with up to 2.1A leakage current. The Asymmetrical N-Channel provides 30V drain-source voltage and up to 85A leakage current. The Complementary N- and P-Channel offers 16V, 30V and 100V drain-source voltage, up to 12A leakage current.

The devices are supplied in SMD packages (TO-22, -25, -26 and SOT-23) and are RoHS compliant and halogen-free. They have a low gate charge and a maximum operating temperature of +150C.

Typical application examples include low-voltage applications, switching power supplies, surface-mount commercial and industrial applications, telecommunication systems, and consumer electronics.