GaN FETs in compact SMD packaging CCPAK for industrial and renewable energy applications

Nexperia has stated that its GaN FET devices, delivering next-gen high-voltage GaN HEMT technology in proprietary copper-clip CCPAK surface mount packaging, are now offered to designers of industrial and renewable energy applications. Building on two decades of expertise in supplying high-volume, high-quality copper-clip SMD packaging, the company is extending its revolutionary packaging approach to GaN cascode switches in CCPAK. The GAN039-650NTB, a 33mOhm (typ.) GaN FET, within the CCPAK1212i top-side cooling package, ushers in a new era of wide bandgap semiconductors and copper-clip packaging. This technology delivers advantages for renewable energy applications such as solar and residential heat pumps, further enhancing its commitment to developing the latest component technology for sustainable applications. It is also ideal for various industrial applications such as servo drives, SMPS, servers and telecom.

The CCPAK surface mount packaging uses the company's proven innovative copper-clip package technology to replace internal bond wires. This decreases parasitic losses, optimises electrical and thermal performance, and enhances device reliability. For maximum flexibility in designs, these CCPAK GaN FETs are offered in top or bottom-cooled configurations to improve heat dissipation further.

The cascode configuration of the GAN039-650NTB allows it to deliver superior switching and on-state performance, with a robust gate providing high margins against noise. This feature also simplifies application designs by eradicating the necessity for complex gate drivers and control circuitry, instead allowing them to be conveniently driven using standard silicon MOSFET drivers. The company's GaN technology improves switching stability and helps to shrink die size by approximately 24%. Also, device RDS(on) is reduced to only 33mOhm (typ.) at 25C, with a high threshold voltage and low diode forward voltage.

"Nexperia recognises that designers of industrial and renewable energy equipment need a highly robust switching solution that can provide excellent thermal efficiency when performing power conversion," according to Carlos Castro, vice president and general manager of the GaN FET business at Nexperia. "This is why Nexperia decided to bring together the exceptional switching performance of its cascode GaN FETs with the exceptional thermal properties of its CCPAK packaging to offer customers a compelling solution."