GAN FETs for low and high-voltage applications

Mouser now stocks the Nexperia power GaN FETs in an e-mode (enhancement mode) configuration for low (100V to 150V) and high (650V) voltage applications from Nexperia. These power GaN FETs deliver enhanced power density through decreased conduction and switching losses. These GaN devices are excellent for consumer and industrial power applications, including networking, automation, and communication infrastructure.

The GAN FETs feature RDS(on) values between 80mOhm and 190mOhm) in DFN 5mm x 6mm and DFN 8mm x 8mm packages. These improve power conversion efficiency in high-voltage, low-power (<650V) datacom/telecom, consumer charging, solar and industrial applications. They can also be used to design BLDC motors and micro server drives for precision with higher torque and more power.

The company also offers a 100V (3.2mOhm) GaN FET in a WLCSP8 package and a 150V (7mOhm) device in an FCLGA package. These devices are ideal for various low-voltage (<150V), high-power applications to deliver, for example, more efficient DC-DC converters in data centres, faster charging (e-mobility and USB Type-C), smaller LiDAR transceivers, lower noise class D audio amplifiers and more power dense consumer devices such as mobile phones, laptops and game consoles.

GaN FETs provide the highest power efficiency with the most compact solution size in many power conversion applications, options that substantially reduce the BOM. GaN-based devices deliver the fastest transition and switching capability (highest dv/dt and di/dt) and superior efficiency in low-power and high-power conversion applications. The outstanding switching performance of these e-mode GaN FETs is attributable to significantly low Qg and QOSS values, while their low RDS(on) allows more power-efficient designs.