Integrated GaN HEMT IC family saves component count and design complexity

Innoscience has announced a family of four new integrated devices that combine power GaN HEMT, driver, current sense and other functions within a single, industry-standard QFN 6x8mm package. The 700V ISG610x SolidGaN devices cover the range from 140mOhm to 450mOhm and save PCB space and BOM count while improving efficiency and simplifying design for applications including USB-PD chargers, LED lighting, AC/DC power supplies and PFC QR flyback, ACF, and LLC converters.

The new, integrated devices feature a wide 9V-80V VCC range, which is beneficial in USB-PD applications that require up to 28V output. Competitive devices with a limited 30V input voltage need an external high-voltage LDO or several discrete components to achieve outputs higher than 15V. The new SolidGaN parts can easily cover the USB-PD output voltage needs without external LDO or other parts, saving BOM cost and board area.

For low-power operation, the family ICs also feature a low 115µA quiescent current thanks to an innovative automatic standby mode activated when the PWM signal voltage remains low for a certain period. During this time, most of the internal circuitry is turned off, dramatically reducing energy wastage, and enabling devices to meet the No-Load standby power specifications of regulatory bodies such as ENERGYSTAR.

The loss-less current sensing with 7% accuracy of the new SolidGaN devices offers several benefits. Firstly, because the current sensing resistor loss is eliminated, a larger RDS(on) can be accommodated with no loss in performance, leading to cost reduction. Secondly, the component count is reduced, and the PCB footprint is minimised.

Commented Min Chen, VP of Design Engineering, Innoscience: “The high level of integration with high current sense accuracy and low quiescent current makes the ISG610x family suitable for simple-to-use, low component count, and high-efficiency applications.”

Devices also provide a programmable switch turn-on slew rate to facilitate EMI reduction. An internal linear voltage regulator is included to ensure a tightly regulated 6.5V driver supply, maximising GaN HEMT current capability while ensuring the reliability of the GaN HEMT. Finally, built-in UVLO, OCP and OTP are included within the IC.

A demo board, INNDAD120B1, is available, describing a quasi-resonant flyback power supply with 90V-264V AC input and 5V/3A, 9V/3A, 12V/3A, 15V/3A, 20V/6A (120W peak) output.

Dr Denis Marcon, general manager, Innoscience Europe comments: “I am very excited on the introduction of these new integrated parts for HV applications thus complementing our portfolio of discrete solutions which are also readily available. Now engineers can choose from us between both a discrete or integrated solution, as best fits their applications and supply chain needs.”