New bi-directional GaN IC for BMS applications

Innoscience Technology has launched a new 100V bi-directional member of the company's VGaN IC family. The first family of VGaN devices rated 40V with a wide on-resistance range (1.2mOhm-12mOhm) have been successfully deployed in the USB OVP of mobile phones such as OPPO, OnePlus, etc.

The new 100V VGaN (INV100FQ030A) can attain high efficiency in 48V or 60V BMS and for high-side load switch applications in bidirectional converters, switching circuits in power systems, and other fields. Such devices are ideal for home batteries, portable charging stations, e-scooters, e-bikes, etc.

One VGaN replaces two back-to-back Si MOSFETs; they are connected with a common drain to accomplish bidirectional switching of battery charging and discharging, lowering on-resistance and loss significantly concerning traditional silicon solutions. BOM count, PCB space and costs are also decreased accordingly.

The VGaN IC supports two-way pass-through, two-way cut-off and no-reverse-recovery modes of operation. Devices provide an extremely low gate charge of just 90nC, ultra-low dynamic on-resistance of 3.2mOhm and a small, 4mm x 6mm package size.

Dr Denis Marcon, general manager, Innoscience Europe, comments: "Innoscience's continuous innovation and development of our core technology plus our 8" wafer GaN IDM model will accelerate the miniaturisation of systems, making them more efficient and energy-saving."