New SiC SBDs offer excellent current carrying and thermal capabilities

Bourns, Inc has released its first 650V-1200V SiC SBDs. The Bourns SiC SBD line comprises six models engineered to deliver excellent current carrying and thermal capabilities and high-power density for increased performance and reliability. These capabilities make the devices optimal high-efficiency power conversion solutions for the growing assortment of high-frequency applications that must fulfil reduced size and lower system cost requirements. Telecom/server SMPS, photovoltaic inverters, PC power and motor drives are a few of the applications that can benefit from the features provided in the series SiC SBDs.

To manage ongoing design demands for ever higher power efficiency, the SBDs provide low forward voltage (VF) and high thermal conductivity, which improves efficiency while decreasing power dissipation, satisfying application necessities of 650V and 1200V solutions. The series also has no reverse recovery current to reduce EMI, allowing these SiC SBDs to greatly lower energy losses. As well as offering 650V to 1200V operation with currents in the 6-10A range, the six new BSD models of wide band gap diodes offer designers different forward voltage, current and package options, including TO220-2, TO247-3, TO252, and DFN8x8.

The six SBDs are RoHS compliant, halogen free, Pb free, and their epoxy potting compound is flame retardant to the UL 94V-0 standard.