Power MOSFET enables high power ratings and density and reduces conduction losses

Vishay Intertechnology, Inc. offers a new Gen 4.5 650V E Series power MOSFET that provides high efficiency and power density for telecom, industrial, and computing applications. Compared to previous-generation devices, the Vishay Siliconix n-channel SiHK050N65E slashes on-resistance by 48.2% while offering a 65.4% lower resistance times gate charge, a key FOM for 650V MOSFETs employed in power conversion applications.

The company offers a wide line of MOSFET technologies that support all stages of the power conversion process, from high-voltage inputs to the low-voltage outputs needed to power the latest high-tech equipment. With the new device and other devices in the E Series family, the company is managing the demand for efficiency and power density improvements in two of the first stages of the power system architecture – PFC and subsequent DC-DC converter blocks.

Built on the company's latest energy-efficient E Series superjunction technology, the device's low typical on-resistance of 0.048-Ohm at 10V results in a higher power rating for applications >6 kW. With 50V of extra breakdown voltage, the 650V device addresses 200VAC to 277VAC input voltages and the Open Compute Project's Open Rack V3 (ORV3) standards. Also, the MOSFET offers ultra-low gate charge at 78nC. The resulting FOM of 3.74-Ohm*nC translates into reduced conduction and switching losses to save energy and increase efficiency. This enables the device to address the specific titanium efficiency needs in server power supplies or reach 96% peak efficiency.

For improved switching performance in hard-switched topologies such as PFC and two-switch forward designs, the MOSFET provides low typical effective output capacitances Co(er) and Co(tr) of 167pF and 1119pF, respectively. The device's resulting resistance times Co(er) FOM is an industry-low 8-Ohm*pF. It is offered in the PowerPAK 10 x 12 package with a Kelvin connection for reduced gate noise and delivers increased dv/dt ruggedness. RoHS-compliant and halogen-free, the MOSFET is designed to withstand overvoltage transients in avalanche mode with guaranteed limits through 100% UIS testing.

Typical applications will include servers, edge computing, and supercomputers; UPS; HID lamps and fluorescent ballast lighting; telecom SMPS; solar inverters; welding equipment; induction heating; motor drives; and battery chargers.