Schottky diode 2000V in TO-247-2 package enables higher efficiency

Many industrial applications today are moving towards higher power levels with minimised power losses. One way to accomplish this is to increase the DC link voltage. Infineon Technologies AG satisfies this market trend with the CoolSiC Schottky diode 2000V G5 product family, the first discrete silicon carbide diodes with a breakdown voltage of 2000V. The product portfolio has now been expanded to include a Schottky diode in the TO-247-2 package, which is pin-compatible with most existing TO-247-2 packages. The product family fits perfectly for applications with DC link voltages up to 1500VDC, making it excellent for solar and EV chargers.

The diode is available with current ratings ranging from 10A to 80A. It enables developers to accomplish higher power levels in their applications while lowering the component count by half compared to 1200V solutions. This simplifies the overall design and allows a seamless transition from multi-level to two-level topologies.

Also, this Schottky diode includes .XT interconnection technology significantly reduces thermal resistance and impedance, improving heat management. Humidity robustness has been validated through HV-H3TRB reliability testing. The diodes exhibit neither reverse recovery nor forward recovery and feature a low forward voltage, ensuring improved system performance.

The diode family perfectly matches the CoolSiC MOSFETs 2000V in the TO-247Plus-4 HCC package, which the company launched in the spring of 2024. In addition to the TO-247-2 package, the diode is also offered in the TO-247PLUS-4 HCC package.

The CoolSiC Schottky Diode 2000V G5 family in TO-247-2 is available now. Also, the company offers an evaluation board for the 2000V CoolSiC product family and a matching gate driver portfolio.