World’s first 48-layer BiCS (three-dimensional stacked structure flash memory)
27-03-2015 |
Toshiba
|
New Technologies
Toshiba has announced the development of the world’s first 48-layer three dimensional stacked cell structure flash memory. Sample shipments of 'BiCS', a 2-bit-per-cell 128-gigabit (16 gigabytes) device have commenced, says the company.
The BiCS is based on a leading-edge 48-layer stacking process, which enhances the reliability of write / erase endurance and boosts write speed, and is suited for use in diverse applications, primarily solid state drives (SSD).
Since making the world’s first announcement of technology for 3D Flash memory, Toshiba has continued development towards optimizing mass production. To meet further market growth in 2016 and beyond, the company is proactively promoting the migration to 3D Flash memory by rolling out a product portfolio that emphasizes large capacity applications, such as SSD, says the company.
The company is also readying for mass production in the new Fab2 at Yokkaichi Operations, its production site for NAND flash memories. Fab2 is now under construction and will be completed in the first half of 2016, to meet growing demand for flash memory.