Wide-pitch eGaN FET family enables high current from smaller footprint

Efficient Power Conversion Corporation (EPC) has announced three new eGaN FETs designed with a wider pitch connection layout. The products expand EPC's family of 'Relaxed Pitch' devices featuring a 1mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6mm x 4.6mm footprint. Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the devices are much smaller and have superior switching performance. They are ideal for applications such as high frequency DC-DC converters, synchronous rectification in DC-DC and AC/DC converters, motor drives, and class-D audio, says the company.