GaN power amplifiers offer high power and gain over wide bands up to 7.5GHz

Pasternack has announced the expansion of its gallium nitride (GaN) coaxial power amplifier portfolio. GaN has emerged as the technology of choice in power amplifier designs. The high power density of gallium nitride semiconductor technology dissipates heat more effectively which results in amplifier designs that have significantly higher output power levels over broadband and narrowband frequencies. These rugged connectorized designs have the advantage of high output load impedance that offers easier impedance matching over wider bandwidths using lower loss components. Applications include commercial and defence systems, medical imaging and communications.

The offering of RF amplifiers includes GaN-based models that feature very high gain levels from 43 to 60dB across mostly broad frequency bands ranging from 30MHz to 7.5GHz. Saturated output power levels range from 10W to 100W with 20 to 35% Power Added Efficiency (PAE). The thermal efficiency of GaN technology enables these assemblies to be integrated into smaller more compact coaxial packages with the same level of high reliability.

The GaN amplifiers have single voltage supplies which are internally regulated. The 50 ohm input/output matched designs are adaptable to a range of power and modulation requirements. These PAs also show notable harmonic response (-15 to -20dBc) under worst-case conditions. They are designed to withstand environmental conditions such as humidity, altitude, shock and vibration. Some models are also equipped with integrated heat sinks and cooling fans. Most designs are EAR99, says the company.

"Pasternack's broad selection of in-stock GaN power amplifiers sets a new standard in offering leading-edge technology for the availability market," said Tim Galla, active RF component product manager, Pasternack. "These highly efficient PAs cover broad and narrowband frequencies with high levels of gain and power in small coaxial packages."