Latest SiC Schottky diodes target high-reliability applications

Littelfuse has introduced the LFUSCD Series of silicon carbide (SiC) Schottky diodes. When compared to standard silicon bipolar power diodes, LFUSCD Series SiC Schottky diodes allow designers to reduce switching losses, accommodate large surge currents without thermal runaway, and operate at higher junction temperatures, all of which enable substantial increases in system efficiency and robustness. The merged p-n Schottky (MPS) device architecture of the LFUSCD Series ensures enhanced surge capability and reduced leakage current. Available in voltage ratings of 650V and 1200V at current ratings ranging from 4A to 30A, they are well-suited for a broad range of markets, including industrial power supplies, solar inverters, industrial drives, welding and plasma cutting, and EV/HEV charging stations. LFUSCD Series SiC Schottky Diodes improve the efficiency, reliability, and thermal management of applications, such as power factor correction (PFC), buck or boost stages in DC-DC converters, free-wheeling diodes in inverter stages (switch-mode power supplies, solar, UPS, industrial drives.) and high-frequency output rectification. “As part of our growing power semiconductor portfolio, we are excited to announce our line of SiC Schottky diodes,” said Dr. Kevin Speer, business development manager for the company's power semiconductor technology line. “With best-in-class forward voltage drop and stored capacitive charge, Littelfuse SiC diodes will enable our customers to optimize the efficiency of their designs while increasing system robustness and reliability.” LFUS Series SiC Schottky Diodes are available in tubes in TO-220 two-lead and TO-247 three-lead packages.