IGBT optimized for welding, UPS and induction heating applications

10-02-2017 | Farnell element14 | Semiconductors

The Infineon IRGP20B120UD-EP, available from Farnell element14, is an insulated gate bipolar transistor with ultrafast soft recovery diode. It features ultrafast non-punch through (NPT) technology and excellent current sharing in parallel operation. It is optimized for welding, UPS and induction heating applications. It features low diode VF (1.67V typical at 20A and 25C). It has ultra-soft diode recovery characteristics and is positive VcE(m) temperature coefficient. The device has a benchmark efficiency above 20kHz. It is rugged with ultrafast performance with a low EMI.
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Infineon IRGP20B120UD-EP

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