DC-DC converters designed to power the latest generation of SiC MOSFETs

RECOM has recently introduced a new 2W DC-DC RxxP21503D converter series specially designed to power the latest generation of SiC MOSFETs. High-frequency and high-voltage switching are the main challenges of driving SiC MOSFETs. Extreme voltage potentials between the control and power side can wear down isolation barriers and lead to failures, which this converter series meets. Switching SiC MOSFETs requires unique turn-on and turn-off voltages atypical of other IGBT or MOSFET applications. The series provides asymmetrical output voltages of +15V and -3V, which are needed to efficiently switch second generation SiC MOSFETs. A typical DC-DC isolation voltage should normally be at least twice the working voltage, but the high ambient temperature and fast switching edges generated by these high-power transistors cause additional stress to the insulation barrier. Therefore, the new series come with 6.4kVDC isolation to ensure that the isolation barrier stands up to even the harshest tests. The internal transformer uses a pot-core to physically separate the input and output windings, yet the converter still fits into an industry standard SIP7 case.