SiC Schottky diode line reduces switching losses, increases efficiency and robustness

17-01-2018 | Littelfuse | Semiconductors

Littelfuse has launched four new series of 1200V SiC Schottky diodes from its GEN2 product family. The LSIC2SD120A08 Series, LSIC2SD120A15 Series, and LSIC2SD120A20 Series enable current ratings of 8A, 15A, 20A, respectively and are produced in TO-220-2L package. Also, the LSIC2SD120C08 Series has a current rating of 8A in package. The MPS device architecture of the diodes enhances surge capability and reduces leakage current. When the new diodes are replaced by standard silicon bipolar power diodes, it allows circuit designers to decrease switching losses dramatically, provide large surge currents without thermal runaway, and run at junction temperatures as high as 175C. This enables substantial increases in power electronics system effectiveness and robustness.
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