New powerful GaN-on-SiC transistors an ideal choice for aerospace applications

Mouser now stocks the QPD1025L GaN on SiC transistors from Qorvo. Operating with 1.8kW at 65V, the device is claimed to be the industry’s highest-power GaN-on-SiC radio frequency transistor, delivering the high signal integrity and extended reach vital for L-band avionics and identification friend or foe (IFF) applications. The proven performance and reliability of GaN technology provides a perfect choice for infrastructure, defence and aerospace applications such as radar, communications, navigation, and similar applications. The increased performance capabilities provide designers with the flexibility to reduce board space and system costs while improving system performance. The device is a HEMT that supports both pulsed and CW operations to more efficiently give performance comparable to silicon-based LDMOS devices. Powered by a 65V rail, the device offers 22.5dB linear gain and typical power-added efficiency (PAE3dB) of 77.2%. The device transistor features internal input prematch, which simplifies external board match and saves board space. The lead-free, RoHS-compliant transistor is supported by the QPD1025L evaluation board.