SiC Schottky diodes shrink energy costs and space requirements

Littelfuse has expanded its portfolio of SiC power semiconductor devices, adding five GEN2 Series 1200V, 3L TO-247 and three GEN2 Series 1200V, 2L TO-263 Schottky diodes. When contrasted with silicon devices, the diodes dramatically decrease switching losses and provide for a substantial increase in efficiency and robustness of power electronics systems. High-efficiency benefits that SiC technologies allow are many advantages to the creators of electric vehicle chargers, data centre power supplies and renewable energy systems. Because the diodes dissipate less energy and are able to operate at higher junction temperatures than many alternative solutions, they need smaller heat sinks and allow a smaller system footprint. End-users benefit from more compact, energy-efficient systems and a possible lower total cost of ownership.