Next-generation MOSFETs increase power supply efficiency

Toshiba Electronics Europe has released a new series of next-generation 650V power MOSFETs that are designed for use in server power supplies in data centres, solar (PV) power conditioners, UPS and other industrial applications. The first device in the DTMOS VI series is the TK040N65Z, a 650V device that provides continuous drain currents (ID) up to 57A and 228A when pulsed (IDP). The new device gives an ultra-low drain-source on-resistance RDS(ON) of 0.04Ohm (0.033Ohm typ) which decreases losses in power applications. The enhancement mode device is perfect for use in modern high-speed power supplies, due to the decreased capacitance in the design. Power supply efficiency is enhanced as a result of reductions in the key performance index/FoM – RDS(ON) x Qgd. The device shows a 40% increase in this important metric over the previous DTMOS IV-H device, which realises a significant gain in power supply efficiency of approximately 0.36% - as measured in a 2.5kW PFC circuit. The new device is contained in an industry-standard TO-247 package, ensuring compatibility with legacy designs as well as suitability for new projects.