Advanced GaN technology returns notable increase in power and efficiency

Power Integrations has released new products in its InnoSwitch3 families of offline CV/CC flyback switcher ICs. The new ICs provide up to 95% efficiency over the full load range and up to 100W in enclosed adapter implementations without needing a heatsink. This groundbreaking improvement in performance is accomplished using an internally produced high-voltage GaN switch technology.

Quasi-resonant InnoSwitch3-CP, InnoSwitch3-EP and InnoSwitch3-Pro ICs consolidate primary, secondary and feedback circuits in a single surface-mounted package. The new GaN switches supersede the traditional silicon high-voltage transistors on the primary side of the IC, decreasing conduction losses when current is flowing, and considerably decreasing switching losses during operation. This results in noticeably less wasted energy and hence increased efficiency and power delivery from the space-saving InSOP-24D package.

Targeting high-efficiency flyback designs, such as USB-PD and high-current chargers/adapters for mobile devices, displays, appliances, set-top boxes, networking and gaming products, the new ICs offer accurate CV/CC/CP independent of external components, and simply interface to fast-charging protocol ICs. The CP and EP variants are hardware-configurable, while the Pro combines a sophisticated digital interface for software control of CV and CC setpoints, exception handing and safety-mode options.

Comments Balu Balakrishnan, president and CEO of Power Integrations: “GaN is a pivotal technology offering significant efficiency and size benefits over silicon. We anticipate a rapid conversion from silicon transistors to GaN in many power applications. InnoSwitch3 has been the clear technology leader in the offline switcher IC market since we launched the silicon variants 18 months ago, and the new GaN-based ICs further extend our lead by advancing both the efficiency and power capability of our flyback products.”