High-efficiency GaN FET is robust and scalable

Nexperia has entered into the GaN FET market with the introduction of the 650V GAN063-650WSA, a robust device with a gate-source voltage (VGS) of +/-20V and a temperature range of -55C to +175C. The device offers a low RDS(on) - down to 60mOhm - and fast switching to provide high efficiency.

The company is targeting high-performance application segments incorporating xEV, datacentres, telecom infrastructure, industrial automation and high-end power supplies. The company's GaN-on-silicon process is robust and mature with proven quality and reliability, and also is highly scalable as wafers can be processed in existing silicon fabrication facilities. Furthermore, this device is offered in the industry-standard TO-247, enabling customers to profit from exceptional GaN performance in a familiar package.

Toni Versluijs, general manager of Nexperia MOS Business Group said: “This is a strategic move for Nexperia into the high voltage area, and we can now deliver technology suitable for xEV power semiconductor applications. Our GaN is a technology that is ready for volume production, and with scalability to meet high volume applications. The automotive sector is a key focus for Nexperia and one which is forecast to grow significantly for two decades as electric vehicles replace those powered by traditional internal combustion engines as the preferred means of personal and public transport.”