PV inverter benefits from SiC technology efficiency

ON Semiconductor has introduced a full SiC power module for solar inverter applications, which has been chosen by Delta to support its M70A three-phase PV string inverter portfolio.

The NXH40B120MNQ family of full SiC power modules combine a 1200V, 40mOhm SiC MOSFET and 1200V, 40A SiC boost diode with dual boost stage. The application of SiC technology gives the low reverse recovery and fast switching characteristics required to deliver the high levels of power efficiency needed in applications such as solar inverters.

"Silicon Carbide technology has the potential to revolutionise the energy market," commented Asif Jakwani, senior vice president of the Advanced Power Division at ON Semiconductor. "The full SiC integrated power modules developed by ON Semiconductor address the need for higher system efficiency at elevated power levels in solar inverters, and demonstrate the maturity of SiC technology."

"With our focus on providing innovative, clean and energy-efficient solutions for a better tomorrow, we are always looking to engage with suppliers that can help us achieve highest efficiency, reduce product volume and weight, and meet the needs of the global solar PV market,” said Raymond Lee, head of Delta’s PV Inverter Business Unit. He added, "The full SiC power modules from ON Semiconductor were selected for our M70A 70kW three-phase PV string inverter because they provide best in class performance, which combined with our unique expertise in high-efficiency power electronics, allow our products to achieve peak energy conversion efficiency as high as 98.8%."

The full SiC power module is offered in two-channel and three-channel variants and is complemented by the NXH80B120MNQ0, a two-channel module that integrates a 1200V, 80mOhm SiC MOSFET with 1200V, 20A SiC diode.