Automotive MOSFETs offer lower resistance and less space required

Rutronik adds PANJIT's new 30V and 40V LV automotive MOSFETs to its portfolio. The field-effect transistors with advanced trench logic level are created to minimise RDS(ON) while maximising avalanche robustness and optimising space requirements. They are AEC-Q101 qualified and have a high junction temperature of +175C. The range is offered in various compact packages, including DFN3333 and DFN5060-8L. The products are excellent for power management functions, infotainment, oil and water pumps, ADAS, engine control, and sensors. They are the optimal option for automotive designers seeking to simplify their circuits while optimising performance.

PANJIT continuously improves low-voltage MOSFETs' performance for a more efficient power supply with less energy consumption and provides transistors for the automotive industry as standard and logic level components. The 30V and 40V N-channel power MOSFETs feature advanced trench technology for an excellent (FOM - Ron x Qg), lower RDS(on) and lower resistance, and supply a junction temperature of up to +175C. The new design also lowers conduction and switching losses while increasing electrical performance. There are Standard level and Logic level available.

The use of the new MOSFETs provides developers clear advantages for an optimised circuit design.