New MOSFET product family for automotive and industrial solutions

Infineon Technologies AG has introduced the 750V G1 discrete CoolSiC MOSFET to satisfy the increasing demand for higher efficiency and power density in industrial and automotive power applications. The product family includes industrial-graded and automotive-graded SiC MOSFETs optimised for totem-pole PFC, T-type, LLC/CLLC, DAB, HERIC, buck/boost, and PSFB topologies. The MOSFETs are excellent for typical industrial applications, such as EV charging, industrial drives, solar and energy storage systems, solid-state circuit breakers, UPS systems, servers/datacentres, telecom, and in the automotive sector, such as OBC, DC-DC converters, and many more.

The device technology features excellent RDS(on) x Q fr and superior RDS(on) x Q oss FOMs, resulting in ultra-high efficiency in hard-switching and soft-switching topologies, respectively. Its unique combination of high threshold voltage (V GS(th), Typ of 4.3V) with low Q GD/Q GS ratio provides high robustness against parasitic turn-on and enables unipolar gate driving, leading to improved power density and low cost of the systems. All devices use the company's proprietary die-attach technology, which supplies outstanding thermal impedance for equivalent die sizes. The highly reliable gate oxide design and qualification standards deliver robust and long-term performance.

With a granular portfolio ranging from 8mOhm to 140mOhm RDS (on) at 25C, this new product family fulfils a wide range of needs. Its design ensures lower conduction and switching losses, boosting overall system efficiency. Its innovative packages minimise thermal resistance, facilitate improved heat dissipation, and optimise in-circuit power loop inductance, resulting in high power density and reduced system costs. It is important to note that this product family features the cutting-edge QDPAK top-side cooled package.