New MOSFET increases power density and efficiency with thermal performance

New Yorker Electronics now supplies Vishay’s new 80V symmetric dual n-channel power MOSFET, which combines high and low-side TrenchFET Gen IV MOSFETs in a single 3.3mm x 3.3mm PowerPAIR 3x3FS package. Designed for power conversion in industrial and telecom applications, the Vishay Siliconix SiZF4800LDT increases power density and efficiency while improving thermal performance, lowering component counts, and simplifying designs.

The dual MOSFET can be used instead of two discrete devices commonly specified in the PowerPAK 1212 package – saving 50% of board space. The device provides designers with a space-saving solution for synchronous buck converters, POL converters, and half- and full-bridge power stages for DC-DC converters in radio base stations, industrial motor drives, welding equipment, and power tools. In these applications, the high and low side MOSFETs of the device form an optimised combination for 50% duty cycles, while its logic level turn-on at 4.5V simplifies circuit driving.

The MOSFET offers best-in-class on-resistance to increase power density down to 18.5mW, typically at 4.5V. This is 16% lower than the closest competing device in the same package dimensions. For increased efficiency in high-frequency switching applications, the device provides a low on-resistance times total gate charge – a key FOM for MOSFETs used in power conversion applications – of 131mW*nC.

The device’s flip-chip technology enhances thermal dissipation – resulting in 54% lower thermal resistance compared to competing MOSFETs. The device’s combination of low on-resistance and thermal resistance results in a continuous drain current of 36A, which is 38% higher than the closest competing device. The MOSFET features a unique pin configuration that enables a simplified PCB layout and supports shortened switching loops to minimise parasitic inductance. The device is 100% Rg- and UIS-tested, RoHS-compliant, and halogen-free.