Fast SiC MOSFETs accelerate next-gen AI growth and EV charging

Navitas Semiconductor has announced its new portfolio of Gen-3 ‘Fast’ (G3F) 650V and 1,200V SiC MOSFETs optimised for the fastest switching speed, highest efficiency, and increased power density for applications such as AI data centre power supplies, OBCs, fast EV roadside super-chargers, and solar/ESS. The broad portfolio covers industry-standard packages from D2PAK-7 to TO-247-4, designed for demanding, high-power, high-reliability applications.

The G3F family is optimised for high-speed switching performance, resulting in a 40% improvement to hard-switching FOMs compared to competition in CCM TPPFC systems. This will increase the wattage of next-generation AI PSUs to up to 10kW and the power per rack from 30 kW to 100-120 kW.

These MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology and offer better-than-trench MOSFET performance while also providing superior robustness, manufacturability, and cost compared to the competition. The MOSFETs deliver high efficiency with high-speed performance, facilitating up to 25C lower case temperature and up to 3x longer life than SiC products from other vendors.

The ‘trench-assisted planar’ technology enables an extremely low RDS(ON) increase versus temperature, resulting in the lowest power losses across the complete operating range and offering up to 20% lower RDS(ON) under real-life operation at high temperatures compared to the competition.

Also, all GeneSiC MOSFETs have the highest-published 100%-tested avalanche capability, 30% longer short-circuit withstand time, and tight threshold voltage distributions for easy paralleling, GeneSiC MOSFETs are ideal for high-power, fast-time-to-market applications.

The company’s latest 4.5kW high-power density AI Server PSU reference design in the CRPS185 form factor showcases the 650V-rated, 40mOhms G3F FETs for an Interleaved CCM TP PFC topology. Alongside the GaNSafe Power ICs in the LLC stage, a power density of 138W/inch3 and peak efficiency above 97% are realised, comfortably achieving ‘Titanium Plus’ efficiency standards, now mandatory in Europe.

For the EV market, 1,200V/34 mOhm (G3F34MT12K) G3F FETs enable Navitas’ new 22kW, 800V Bi-Directional OBC and 3KW DC-DC converter to achieve a superior power density of 3,5kW/L and a peak efficiency of 95.5%.

“G3F sets a new standard for efficient, cool-running SiC performance, coupled with high reliability and robustness for high-power, high-stress systems,” noted Dr. Sid Sundaresan, Senior Vice President of SiC Technology and Operations. “We’re pushing the boundaries of SiC, with up to 600kHz switching speeds, and hard-switching figures-of-merit up to 40% better than competition.”