40V MOSFET offers best-in-class RDS(ON) to increase efficiency

To provide higher efficiency and power density for industrial applications, Vishay Intertechnology, Inc. has introduced a new 40V TrenchFET Gen V n-channel power MOSFET in the PowerPAK 10x12 package with best-in-class on-resistance. Compared to competing devices in the same footprint, the Vishay Siliconix SiJK140E slashes on-resistance by 32% while delivering 58% lower on-resistance than 40V MOSFETs in the TO-263-7L.

With on-resistance down to 0.34mOhm typical at 10V, the device minimises power losses from conduction to increase efficiency while enhancing thermal performance with a low RthJC of 0.21C/W typical. By enabling designers to use one device instead of two in parallel to achieve the same low on-resistance, the device also improves reliability and mean time between failures (MTBF).

The MOSFET features a bond-wireless (BWL) design that minimises parasitic inductance while maximising current capability. While TO-263-7L solutions in bond-wired (BW) packages are limited to currents of 200A, the device delivers a continuous drain current up to 795A for increased power density while providing a robust SOA capability. Occupying an area of 120mm2, the device’s PowerPAK 10x12 package saves 27% PCB space compared to the TO-263-7L while delivering a 50% lower profile.

The SiJK140E is ideal for synchronous rectification, hot swap switching, and OR-ing functionality. Typical applications include motor drive controls, power tools, welding equipment, plasma cutting machines, battery management systems, robotics, and 3D printers. The standard-level FET provides a high threshold voltage of 2.4Vgs to avoid shoot-through in these products. RoHS-compliant and halogen-free, the MOSFET is 100% Rg and UIS tested.