SiC Schottky diodes deliver improved efficiency and reliability for switching power supplies

The third generation of 1,200V SiC Schottky diodes (5A–40A) with an MPS design from Vishay Intertechnology expands Rutronik's diode portfolio. The diodes increase the efficiency and reliability of switching power supply designs and deliver high surge current capability, low forward current, low capacitive charge and low reverse leakage current for reduced power loss. The devices also offer virtually no recovery time, further increasing efficiency. The diodes are highly robust and ideal for usage in AC/DC PFC and DC-DC ultra-high-frequency output rectification in FBPS and LLC converters.

The diodes have passed a HTRB test of 2,000 hours and a temperature cycle test of 2,000 thermal cycles and perform reliably at operating temperatures of up to +175C. They are available in TO-220AC 2L, TO-220AC 2L and TO-247AD 3L packages for through-hole mounting and D2PAK 2L (TO-263AB 2L) for surface mounting and are available with 5A to 40A. The D2PAK 2L package is moulded compound with a CTI³ 600 for excellent electrical insulation even at high voltages. The devices’ MPS structure, featuring a backside thinned via laser annealing technology, lowers their forward voltage drop.

Typical applications include power generation and exploration applications.