02-12-2024 | WIN SOURCE | Power
This high-performance, Non-punch-through (NPT) N-channel IGBT from ON Semiconductor is designed for high-voltage switching applications that require low conduction losses and fast switching speeds. The device is now available from WIN SOURCE.
Operating with a voltage capacity of 1200V and a continuous collector current of 43A, the device delivers excellent performance in power electronics. Its unique integration of a hyperfast anti-parallel diode ensures low switching losses. It is ideal for AC and DC motor controls, power supplies, and drivers for solenoids, relays, and contactors. Also, its short circuit withstands up to 15μs, improving its durability in high-stress conditions.
The device excels in environments where reliability is crucial, thanks to its wide operating temperature range of -55C to 150C. With a typical fall time of just 340ns, it is engineered for rapid switching, contributing to greater efficiency and reduced power losses. The IGBT’s low conduction loss and ability to handle high currents and voltages make it excellent for industrial applications that demand high efficiency and robust performance.
Packaged in a compact TO-247 form factor, this IGBT ensures optimal heat dissipation, and its Pb-free design aligns with modern environmental regulations, making it a green option for engineers and system designers.
The device provides a reliable, high-performance solution from motor drives to power conversion systems. Its advanced features ensure stable and efficient operations in an assortment of demanding applications, helping engineers create systems that are not only powerful but also energy-efficient.
The HGTG11N120CND stands out as a versatile and dependable choice for professionals aiming to improve their high-voltage applications with a performance and reliability component.
