GaN FET portfolio supports wide power needs in low/high-voltage applications

Nexperia has added 12 new devices to its continuously expanding e-mode GaN FET portfolio. This latest release is intended to meet the growing demand for higher efficiency and more compact systems. The new low and high-voltage e-mode GaN FETs manage multiple markets, including consumer, industrial, server/computing and telecommunications, focusing on supporting high-voltage, low to mid-power and low-voltage, low to high-power use cases. Since introducing e-mode GaN FETs in 2023, the company remains the only supplier in the industry to provide cascode or d-mode and e-mode devices, supplying designers with convenience when faced with varying challenges during the design process.

The latest additions to the company's e-mode GaN FET portfolio include new low-voltage 40V bi-directional devices (RDSon<12mOhm) to support OVP, load switching, and low-voltage applications, including BMS in mobile devices and laptop computers. Also featuring in this release are 100V and 150V devices (RDSon<7mOhm) suited to SR power supplies in consumer devices, DC-DC converters in datacomms and telecoms equipment, photovoltaic micro-inverters, Class-D audio amplifiers and motor control systems in e-bikes, forklifts and light electric vehicles (LEVs). The new higher voltage range features 700V devices (RDSon>140mOhm) to support LED drivers and PFC applications and 650V devices (RDSon>350mOhm) suitable for usage in AC/DC converters.

The superior switching performance of the company's e-mode GaN FET technology is due to its exceptionally low QG and QOSS values. These new devices offer industry-leading FOM, making them an excellent choice for high-efficiency power solutions.