Industry-leading 1200V SiC MOSFETs launched in top-side cooled X.PAK

25-03-2025 | Nexperia | Power

Nexperia has introduced a range of highly efficient and robust industrial grade 1200V SiC MOSFETs with industry-leading temperature stability in innovative surface-mount (SMD) top-side cooled packaging technology called X.PAK. This package, with its compact form factor of 14mm x 18.5mm, incorporates the assembly benefits of SMD with the cooling efficiency of through-hole technology, providing optimal heat dissipation. This release addresses the growing need from a wide range of high-power (industrial) applications for discrete SiC MOSFETs that harness the advantages of top-side cooling to deliver exceptional thermal performance. These switches are ideal for industrial applications such as BESS, photovoltaic inverters, motor drives, and UPS. Additionally, they are ideal for EV charging infrastructure, including charge piles.

The X.PAK package further improves the thermal performance of the company's SiC MOSFETs by decreasing the negative impacts of heat dissipation via the PCB. Furthermore, the X.PAK package allows low inductance for surface mount components and supports automated board assembly.

The new X.PAK packaged devices deliver class-leading FoM known from the company's SiC MOSFETs, with RDS(on) being a particularly critical parameter due to its impact on conduction power losses. However, many manufacturers focus on this parameter's nominal value and neglect that it can increase by more than 100% as device operating temperatures rise, resulting in notable conduction losses. On the other hand, the company's SiC MOSFETs provide industry-leading temperature stability, with the nominal value of RDS(on) increasing by only 38% over an operating temperature range from 25C to 175C.

"The introduction of our SiC MOSFETs in X.PAK packaging marks a significant advancement in thermal management and power density for high-power applications," said Katrin Feurle, senior director and head of SiC Discretes and Modules at Nexperia. "This new top-side cooled product option builds on our successful launches of discrete SiC MOSFETs in TO-247 and SMD D2PAK-7 packages. It underscores Nexperia's commitment to providing our customers with the most advanced and flexible portfolio to meet their evolving design needs."

The initial portfolio includes products with RDS(on) values of 30, 40, and 60mOhm (NSF030120T2A0, NSF040120T2A1, NSF060120T2A0), a part with 17mOhm will be released in April 2025. An automotive-qualified SiC MOSFETs portfolio in X.PAK packaging will follow later in 2025, and further RDson classes like 80mOhm.

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By Seb Springall

Seb Springall is a seasoned editor at Electropages, specialising in the product news sections. With a keen eye for the latest advancements in the tech industry, Seb curates and oversees content that highlights cutting-edge technologies and market trends.