Radiation-hardened LEO A-Grade ICs enable space and medical applications

Mouser Electronics, Inc. now stocks radiation-hardened LEO A-Grade ICs from Apogee Semiconductor. These ICs include logic devices, level translators, transceivers and more. These devices are fabricated in a 180nm CMOS process using proprietary radiation-hardening techniques, enabling high resiliency to SEE and a TID up to 30krad (Si). These features make them excellent for small satellites and LEO constellations that need high performance, a small form factor and radiation resilience at a lower cost, and other applications where resistance to radiation is vital, such as medical imagining. These devices are also appropriate for aerospace, energy, and other applications that involve harsh environments.

The Apogee Semiconductor AP54RHC288 radiation-hardened, dual-input arbiters protect critical applications by assuring that only one output is high on each channel, regardless of the signal state at the inputs. This functionality is excellent for half-bridge drivers, thrusters, power supplies, and applications where cross-conduction must be avoided. These arbiters include a triple-redundant design throughout the circuit, which allows the devices to be immune to SET.

The AP54RHC86 radiation-hardened, quad 2-input XOR gates feature built-in triple redundancy for enhanced reliability and logic-level down translation to VCC. Zero-power penalty cold-sparing and Class 2 ESD protection on all inputs and outputs are supported. A proprietary output stage and robust POR circuit allow the device to be cold-spared in any redundant configuration with no static power loss on any pad of the device. The redundant output stage also features a high drive capability with low static power loss.

The AP54RHC04 radiation-hardened hex inverter provides proprietary cold-sparing capability with zero static power penalty and built-in triple redundancy for improved reliability. This inverter incorporates an internal POR circuit that ensures correct operation at voltages as low as 1.65V. The device delivers logic-level down translation to VCC and supports class 2 ESD protection (4000V HBM and 500V CDM).

The AP54RHC164 radiation-hardened SIPO shift registers include a proprietary output stage that allows for cold-sparing configurations as it avoids a leakage current penalty on inputs and outputs while in a power-down state. This feature results in considerable power savings in systems with multiple-path redundancy.