Infineon Technologies AG has added P-channel power MOSFETs to its family of radiation-tolerant power MOSFETs for LEO space applications. The new devices are part of its expanding portfolio created for next-generation 'NewSpace' applications, delivering cost-optimised radiation-tolerant MOSFETs that allow engineers to accomplish faster time-to-market designs using smaller and lighter weight components with radiation performance suitable for missions lasting two to five years.
"Successful deployment of next-generation LEO satellite constellations and other space-ready systems require radiation-tolerant discretes and ICs with lead times and production volumes that enable rapid deployment and cost optimisation," said Chris Opoczynski, Sr VP and general manager of High Reliability (HiRel) Business, Power and Sensor Systems Division, Infineon Technology. "Infineon is leveraging its 50 years of space heritage to bring an industry-first portfolio of efficient and reliable power devices to this dynamic sector of the business."
The new MOSFET complements the already available 60V and 150V N-channel devices, all provided in plastic packaging, which is lower in cost than the conventional hermetic packaging used in rad-hardened devices and can be produced in higher volumes using standard manufacturing practices. The radiation-tolerant discretes are qualified for space applications according to the relevant tests of the AEC-Q101 standard. Further package tests such as outgas and salt atmosphere tests are included as part of the qualification, and they are rated for Single Event Effects (SEE) at 46 MeV∙cm²/mg LET and a Total Ionizing Dose (TID) of 30 to 50 krad (Si). The operating temperature rating is -55C to 175C (maximum). State-of-the-art technologies, like the patented CoolMOS superjunction technology used for the N-channel MOSFETs enable FETs from the company to provide fast switching capabilities as compared to alternative solutions.
The company offers a diverse product range that caters to various mission needs. It offers four different N-channel MOSFETs, each optimised for specific tasks, empowering engineers to select between two voltage versions – 60V and 150V along with the 60V P-channel, delivering the flexibility to suit different power needs.