New SiC Schottky diodes increase efficiency and reliability for switching power designs

Featuring an MPS Design, 5 A to 40 A Devices Offer Lower Forward Voltage Drop, Capacitive Charge, and Reverse Leakage Current

Vishay Intertechnology, Inc. has released 16 new Gen 3 1200V SiC Schottky diodes. Featuring an MPS design, the Vishay Semiconductors devices combine high surge current robustness with low forward voltage drop, capacitive charge, and reverse leakage current to improve efficiency and reliability in switching power designs.

These next-generation SiC diodes consist of 5A to 40A devices in the TO-220AC 2L, TO-247AD 2L, and TO-247AD 3L through-hole and D²PAK 2L (TO-263AB 2L) surface-mount packages. The diodes provide a low capacitance charge down to 28nC, while their MPS structure – which features a backside thinned via laser annealing technology – supplies a reduced forward voltage drop of 1.35V. Also, the devices' low typical reverse leakage current down to 2.5µA at 25C decreases conduction losses, providing high system efficiency during light loads and idling. Unlike ultrafast diodes, the Gen 3 devices have virtually no recovery tail, which further improves efficiency.

Typical applications for the diodes will include AC/DC PFC and DC-DC ultra-high frequency output rectification in FBPS and LLC converters for solar power inverters; energy storage systems; industrial drives and tools; and datacentres. For the harsh environments of these applications, the devices combine operating temperatures to +175C with forward surge ratings to 260A for high robustness. Also, diodes in the D²PAK 2L package feature a moulding compound with a high CTI ≥600, ensuring excellent electrical insulation at elevated voltages.

Offering high reliability, the RoHS-compliant and halogen-free devices have passed HTRB testing of 2000 hours and temperature cycling testing of 2000 thermal cycles.