Nexperia


First SiC MOSFETs raise the bar for robust and reliable power switching

Nexperia offers its first SiC MOSFETs by releasing two 1200V discrete devices in three-pin TO-247 packaging with RDS(on) values of 40mOhm and 80mOhm. NSF040120L3A0 and NSF080120L3A

Power | 06-12-2023

Ultra-low capacitance ESD protection diodes shield automotive data interfaces

Nexperia has extended its portfolio of ultra-low capacitance ESD protection diodes created to protect high-speed data lines in interfaces such as USB, HDMI, high-speed video links

Semiconductors | 23-10-2023

Partners produce a 650V silicon carbide rectifier module for power applications

Nexperia has partnered with Kyocera AVX Components to jointly produce a new 650V, 20A SiC rectifier module for high-frequency power applications ranging from 3kW to 11kW power stac

Power | 16-10-2023

Expanded portfolio includes first integrated 5V load switch

Nexperia has expanded its analog and logic product portfolio by introducing the load switch product family. Headlining the release is the NPS4053, a high-density IC developed to su

Power | 24-08-2023

Industry’s first coin cell battery life and power booster

Nexperia has introduced the NBM7100 and NBM5100, revolutionary new types of battery life boosting ICs designed to prolong the life of a typical non-rechargeable lithium coin cell b

Power | 19-07-2023

New discrete IGBTs offer class-leading efficiency in power applications

Nexperia has released its entry to the IGBT market with a range of 600V devices, starting with the 30A NGW30T60M3DF. Adding IGBTs to its extensive portfolio meets the increasing de

Power | 17-07-2023

High-efficiency switching with reduced spiking offered with wider package options

Nexperia has broadened the package options for its NextPower 80/100V MOSFETs portfolio now also includes LFPAK56 and LFPAK88 packaging. These devices have been developed to combine

Power | 26-06-2023

Interactive datasheets place MOSFET behaviour analysis at engineers' fingertips

Nexperia announced a significant raising of the bar in semiconductor engineer design support by releasing next-generation interactive datasheets to accompany its power MOSFETs. By

Power | 18-05-2023

e-mode GaN FETs for low and high-voltage applications

Nexperia has launched its first Power GaN FETs in e-mode (enhancement mode) configuration for low (100/150V) and high (650V) voltage applications. By augmenting its cascode offerin

Power | 16-05-2023

I2C GPIO expanders feature configurable pull-up resistor and pin-compatible footprints

Nexperia has released a new portfolio of 16-channel I2C GPIO expanders created to improve flexibility and reuse in electronic systems. The portfolio offers an elegant solution for

Semiconductors | 03-05-2023

SiC diodes released for demanding power conversion applications

Nexperia has released a 650V SiC Schottky diode developed for power applications which need ultra-high performance, low loss, and high efficiency. The 10A, 650V device is an indust

Power | 28-04-2023

Energy harvesting PMIC enables huge BOM cost savings

Nexperia has expanded its range of Power ICs with Energy Harvesting solutions to simplify and improve the performance of low-power IoT and other embedded applications. The NEH2000B

Power | 17-04-2023

First application-specific MOSFETs for hotswap with reduced footprint

Nexperia has released its first 80V and 100V application-specific MOSFETs (ASFETs) for hotswap with enhanced safe operating area in a compact 8mm x 8mm LFPAK88 package. These new A

Power | 30-03-2023